? 2014 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 600 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 600 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c 48 a i dm t c = 25 ? c, pulse width limited by t jm 200 a i a t c = 25 ? c40a e as t c = 25 ? c2j dv/dt i s ? i dm , v dd ? v dss , t j ? 150 ? c 35 v/ns p d t c = 25 ? c 540 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 ?????????????????? v ? f c mounting force 20..120/4.5..27 n/lb weight 5 g symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 600 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = ? 30v, v ds = 0v ????????????????????? 200 na i dss v ds = v dss , v gs = 0v 50 ? a t j = 125 ? c 4 ma r ds(on) v gs = 10v, i d = 40a, note 1 85 m ? IXFR80N60P3 v dss = 600v i d25 = 48a r ds(on) ? ? ? ? ? 85m ? ? ? ? ? t rr ? ? ? ? ? 250ns ds100357b(04/14) n-channel enhancement mode fast intrinsic rectifier features ? silicon chip on direct-copper bond (dcb) substrate ? isolated mounting surface ? low intrinsic gate resistance ? 2500v~ electrical isolation ? dynamic dv/dt rating ? avalanche rated ? fast intrinsic rectifier ? low q g ? low r ds(on) ? low drain-to-tab capacitance ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? dc-dc converters ? battery chargers ? switch-mode and resonant-mode power supplies ? uninterrupted power supplies ? ac motor drives ? high speed power switching applications polar3 tm hiperfet tm power mosfet g = gate d = drain s = source isoplus247 e153432 g s d isolated tab
IXFR80N60P3 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 80 a i sm repetitive, pulse width limited by t jm 320 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.4 ? c i rm 13.0 a i f = 40a, -di/dt = 100a/ ? s v r = 100v, v gs = 0v symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 40a, note 1 55 90 s c iss 13.1 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1240 pf c rss 5.0 pf r gi gate input resistance 1.0 ?? t d(on) 48 ns t r 25 ns t d(off) 87 ns t f 8 ns q g(on) 190 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 40a 56 nc q gd 48 nc r thjc 0.23 ?? c/w r thcs 0.15 ?????????????????? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 40a r g = 1 ? (external) 1 = gate 2,4 = drain 3 = source isoplus247 (ixfr) outline
? 2014 ixys corporation, all rights reserved IXFR80N60P3 fig. 5. r ds(on) normalized to i d = 40a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 20 40 60 80 100 120 140 160 180 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0123456 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 02468101214 v ds - volts i d - amperes 5v 6v 4v v gs = 10v 7v fig. 4. r ds(on) normalized to i d = 40a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 80a i d = 40a
IXFR80N60P3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 20 40 60 80 100 120 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = 300v i d = 40a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2014 ixys corporation, all rights reserved ixys ref: f_80n60p3(w9) 3-10-11 IXFR80N60P3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w
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